71V416S10PHG8
IC SRAM 4MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation's 71V416S10PHG8 is an asynchronous SRAM memory component offering 4Mbit of storage capacity. This device features a parallel interface and a fast 10 ns access time, suitable for high-speed data buffering and storage applications. Its memory organization is 256K x 16, with a volatile memory type. The 71V416S10PHG8 is supplied in a 44-TSOP II package, designed for surface mounting, and operates within a voltage range of 3V to 3.6V. The write cycle time for a word or page is also 10 ns. This component is commonly utilized across various industries including telecommunications, industrial automation, and consumer electronics where rapid data access is critical. It is available in tape and reel packaging for efficient manufacturing processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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