71V416S10BEG
IC SRAM 4MBIT PARALLEL 48CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation presents the 71V416S10BEG, a 4Mbit asynchronous SRAM memory IC. This component offers a parallel interface with an access time of 10 ns, enabling rapid data retrieval. Its memory organization is 256K x 16, providing a substantial capacity for data storage. The 71V416S10BEG operates within a voltage range of 3V to 3.6V and is designed for surface mount applications. It is housed in a compact 48-CABGA (9x9) package. This volatile memory solution is suitable for demanding applications across various industries, including telecommunications, industrial automation, and consumer electronics where high-speed memory is critical. The operating temperature range is 0°C to 70°C (TA).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-CABGA (9x9) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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