71V416S10BE8
IC SRAM 4MBIT PARALLEL 48CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 71V416S10BE8 is a 4Mbit asynchronous SRAM memory IC. This component features a parallel interface with an access time of 10 ns, enabling efficient data retrieval. The memory organization is 256K x 16, providing a substantial capacity for data storage. Operating within a voltage range of 3V to 3.6V, the 71V416S10BE8 is designed for surface mount applications. It is supplied in a 48-CABGA (9x9) package, presented on tape and reel. This SRAM is suitable for applications requiring fast, non-volatile data buffering and is commonly utilized in industrial automation, automotive systems, and consumer electronics where reliable memory performance is critical. The write cycle time for a word or page is 10 ns.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-CABGA (9x9) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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