71V416L10YG
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 71V416L10YG is a 4Mbit asynchronous SRAM device. This memory IC features a parallel interface and a memory organization of 256K x 16, providing a substantial 4Mbit capacity. With an access time of 10 ns and a write cycle time of 10 ns, it is suitable for applications requiring rapid data retrieval and manipulation. The component operates with a supply voltage range of 3V to 3.6V and is housed in a 44-SOJ package, designed for surface mounting. The operating temperature range for this device is 0°C to 70°C (TA). This memory solution is frequently utilized in industrial automation, networking equipment, and consumer electronics where high-speed volatile memory is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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