71V416L10BE8
IC SRAM 4MBIT PARALLEL 48CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 71V416L10BE8 is a 4Mbit asynchronous SRAM memory device featuring a parallel interface. Organized as 256K x 16, this component offers a rapid 10 ns access time and a 10 ns write cycle time. The surface-mount 48-CABGA (9x9) package is supplied on tape and reel. Operating within a voltage range of 3V to 3.6V, the 71V416L10BE8 is suitable for applications requiring high-speed data buffering and storage. Its specifications make it a viable option for use in industrial automation, consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-CABGA (9x9) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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