71V256S10YG
IC SRAM 256KBIT PARALLEL 28SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation's 71V256S10YG is a high-speed asynchronous SRAM memory component. This device offers a memory organization of 32K x 8, providing a total capacity of 256Kbit. With an access time of 10 ns, it is suitable for applications demanding rapid data retrieval. The parallel memory interface facilitates efficient data transfer. The 71V256S10YG operates within a voltage range of 3V to 3.6V and features a write cycle time of 10 ns. Packaged in a 28-SOJ (0.300", 7.62mm width) surface-mount configuration, this component is designed for demanding applications across various industries, including telecommunications and industrial automation. The operating temperature range is specified as 0°C to 70°C (TA).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 28-BSOJ (0.300"", 7.62mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 256Kbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 28-SOJ |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 32K x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
70T3339S133BF
IC SRAM 9MBIT PARALLEL 208CABGA
70V25L25J
IC SRAM 128KBIT PARALLEL 84PLCC
7134LA55L48B
IC SRAM 32KBIT PARALLEL 48LCC
