71V124SA10YG
IC SRAM 1MBIT PARALLEL 32SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation presents the 71V124SA10YG, a 1Mbit asynchronous SRAM memory component. This device features a parallel memory interface with a memory organization of 128K x 8 and a fast access time of 10 nanoseconds. The 71V124SA10YG operates within a supply voltage range of 3.15V to 3.6V and is specified for an operating temperature range of 0°C to 70°C. Packaged in a 32-lead SOJ (Small Outline J-Lead) format, this surface-mount component is suitable for applications requiring high-speed data storage. Its specifications make it a viable option for use in industrial automation, telecommunications, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 32-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3.15V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 32-SOJ |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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