71V016SA20YGI8
IC SRAM 1MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 71V016SA20YGI8 is a 1Mbit asynchronous SRAM device organized as 64K x 16. This component features a parallel memory interface with a rapid access time of 20 ns, making it suitable for high-speed data buffering and storage applications. The 71V016SA20YGI8 operates within a voltage range of 3V to 3.6V and has a write cycle time of 20ns. Packaged in a 44-SOJ (44-BSOJ) for surface mounting, this memory IC is designed for operation in industrial environments, with an extended temperature range of -40°C to 85°C. Its performance characteristics make it a valuable component in telecommunications, industrial automation, and consumer electronics where fast, reliable data storage is critical. This device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 64K x 16 |
| Programmable | Not Verified |
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