71V016SA12YG
IC SRAM 1MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation's 71V016SA12YG is a high-speed, 1Mbit asynchronous SRAM organized as 64K words by 16 bits. This component features a 12 ns access time and a 12 ns write cycle time, making it suitable for demanding applications requiring rapid data access. The 71V016SA12YG operates from a 3V to 3.6V supply voltage and is housed in a 44-SOJ package, designed for surface mounting. Its robust performance characteristics make it a valuable solution for industrial control systems, networking equipment, and consumer electronics where fast, volatile memory is critical. The device operates within an ambient temperature range of 0°C to 70°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 64K x 16 |
| Programmable | Not Verified |
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