7164S35TDB
IC SRAM 64KBIT PARALLEL 28CDIPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 7164S35TDB is an asynchronous SRAM memory integrated circuit with a density of 64Kbit, organized as 8K x 8. This component features a parallel interface and a fast access time of 35 ns, with a corresponding write cycle time of 35 ns. The device operates over a voltage range of 4.5V to 5.5V and is specified for an extended operating temperature range of -55°C to 125°C. It is housed in a 28-CDIP package, designed for through-hole mounting. This memory component finds application in various industrial and military systems requiring reliable, high-speed data storage.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 28-CDIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Memory Size | 64Kbit |
| Memory Type | Volatile |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 28-CDIP |
| Write Cycle Time - Word, Page | 35ns |
| Memory Interface | Parallel |
| Access Time | 35 ns |
| Memory Organization | 8K x 8 |
| Programmable | Not Verified |
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