71256S45TDB
IC SRAM 256KBIT PARALLEL 28CDIPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 71256S45TDB is an asynchronous SRAM memory integrated circuit. This component offers a memory organization of 32K x 8, providing a total density of 256Kbit. Featuring a parallel interface, the 71256S45TDB boasts an access time of 45 ns and a corresponding write cycle time. Designed for through-hole mounting, it is housed in a 28-CDIP package with a 0.300" (7.62mm) footprint. The device operates within a supply voltage range of 4.5V to 5.5V and is specified for operation across an extended temperature range of -55°C to 125°C. This memory solution is suitable for applications in industrial, automotive, and telecommunications sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 28-CDIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Memory Size | 256Kbit |
| Memory Type | Volatile |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 28-CDIP |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 32K x 8 |
| Programmable | Not Verified |