Home

Products

Integrated Circuits (ICs)

Memory

Memory

71256S35TDB

Banner
productimage

71256S35TDB

IC SRAM 256KBIT PARALLEL 28CDIP

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation's 71256S35TDB is an asynchronous SRAM memory component featuring a 256Kbit capacity organized as 32K x 8. This parallel interface device offers a fast access time of 35 ns, making it suitable for demanding applications where low latency is critical. The 71256S35TDB operates with a supply voltage range of 4.5V to 5.5V and is specified for operation across an extended temperature range of -55°C to 125°C. Its 28-CDIP package facilitates through-hole mounting. This memory component finds application in industrial control systems, telecommunications infrastructure, and other high-reliability electronic designs.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case28-CDIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Memory Size256Kbit
Memory TypeVolatile
Operating Temperature-55°C ~ 125°C (TA)
Voltage - Supply4.5V ~ 5.5V
TechnologySRAM - Asynchronous
Memory FormatSRAM
Supplier Device Package28-CDIP
Write Cycle Time - Word, Page35ns
Memory InterfaceParallel
Access Time35 ns
Memory Organization32K x 8
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
70T3339S133BF

IC SRAM 9MBIT PARALLEL 208CABGA

product image
70V25L25J

IC SRAM 128KBIT PARALLEL 84PLCC

product image
7134LA55L48B

IC SRAM 32KBIT PARALLEL 48LCC