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71256S25TDB

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71256S25TDB

IC SRAM 256KBIT PARALLEL 28CDIP

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation 71256S25TDB is a 256Kbit asynchronous SRAM memory IC featuring a parallel interface and a 32K x 8 organization. This through-hole component offers a fast access time of 25 ns, with a corresponding write cycle time of 25 ns. Operating within a 4.5V to 5.5V supply voltage range, the 71256S25TDB is designed for robust performance across an extended temperature range of -55°C to 125°C (TA). Packaged in a 28-CDIP (0.300", 7.62mm), this volatile memory solution is suitable for applications in industrial control, telecommunications, and consumer electronics requiring reliable, high-speed data storage.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case28-CDIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Memory Size256Kbit
Memory TypeVolatile
Operating Temperature-55°C ~ 125°C (TA)
Voltage - Supply4.5V ~ 5.5V
TechnologySRAM - Asynchronous
Memory FormatSRAM
Supplier Device Package28-CDIP
Write Cycle Time - Word, Page25ns
Memory InterfaceParallel
Access Time25 ns
Memory Organization32K x 8
ProgrammableNot Verified

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