71016S20YG8
IC SRAM 1MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 71016S20YG8 is an asynchronous SRAM memory integrated circuit. This component offers a 1Mbit memory capacity organized as 64K x 16, featuring a parallel interface. With an access time of 20 ns, it is suitable for applications requiring rapid data retrieval. The device operates within a voltage range of 4.5V to 5.5V and has a write cycle time of 20ns. Supplied in a 44-SOJ package and delivered on tape and reel, this surface-mount component is designed for operation within a 0°C to 70°C ambient temperature range. This memory solution finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 64K x 16 |
| Programmable | Not Verified |
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