71016S12YG
IC SRAM 1MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation 71016S12YG is a 1Mbit asynchronous SRAM device featuring a parallel memory interface. This component offers a fast 12 ns access time and a word write cycle time of 12 ns. The memory organization is 64K x 16, providing a versatile solution for data storage requirements. Operating within a supply voltage range of 4.5V to 5.5V, it is suitable for applications demanding high-speed data access. The 44-SOJ package facilitates surface mount integration. This SRAM is commonly utilized in industrial automation, telecommunications infrastructure, and consumer electronics where reliable and rapid data buffering is critical. The device operates within a temperature range of 0°C to 70°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 64K x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
72142S50P
IC SRAM
71V3577S80BQI8
IC SRAM 4.5MBIT PAR 165CABGA
7024L15PFI8
IC SRAM 64KBIT PARALLEL 100TQFP
