70V659S10DR
IC SRAM 4.5MBIT PARALLEL 208PQFPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation presents the 70V659S10DR, a high-performance 4.5Mbit asynchronous dual-port SRAM. This device offers a rapid 10 ns access time and a 10 ns write cycle time, facilitating efficient data throughput. The memory is organized as 128K x 36 bits, presented in a 208-PQFP (28x28) surface-mount package. Operating within a voltage range of 3.15V to 3.45V, the 70V659S10DR is designed for demanding applications requiring fast, flexible memory access. Its robust architecture makes it suitable for use in various industries, including telecommunications, networking, and industrial automation where high-speed data buffering and inter-processor communication are critical. This component is supplied in a tray.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 208-BFQFP |
| Mounting Type | Surface Mount |
| Memory Size | 4.5Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3.15V ~ 3.45V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 208-PQFP (28x28) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 128K x 36 |
| Programmable | Not Verified |
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