70V659S10BF
IC SRAM 4.5MBIT PAR 208CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 70V659S10BF is a 4.5Mbit asynchronous dual-port SRAM organized as 128K x 36. This high-speed memory device offers a guaranteed access time of 10 ns and a write cycle time of 10 ns. Featuring a parallel interface, the 70V659S10BF is suitable for applications requiring efficient data buffering and high-bandwidth communication. Its robust design and volatile memory type make it ideal for demanding tasks in telecommunications infrastructure, networking equipment, and industrial automation systems. The component is housed in a 208-CABGA (15x15) package, designed for surface mounting. Operating within a temperature range of 0°C to 70°C, it supports supply voltages from 3.15V to 3.45V.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 208-LFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4.5Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3.15V ~ 3.45V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 208-CABGA (15x15) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 128K x 36 |
| Programmable | Not Verified |
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