70V657S10DR
IC SRAM 1.125MBIT PAR 208PQFPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 70V657S10DR is a 1.125Mbit asynchronous dual-port SRAM device organized as 32K x 36. Featuring a rapid 10 ns access time, this component is housed in a 208-PQFP (28x28) package for surface mounting. The device operates within a supply voltage range of 3.15V to 3.45V. Its dual-port architecture facilitates concurrent read and write operations, making it suitable for applications requiring high-speed data buffering and manipulation. Industries such as telecommunications, networking equipment, and industrial automation commonly utilize such high-performance memory solutions. The 70V657S10DR supports a write cycle time of 10ns.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 208-BFQFP |
| Mounting Type | Surface Mount |
| Memory Size | 1.125Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3.15V ~ 3.45V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 208-PQFP (28x28) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 32K x 36 |
| Programmable | Not Verified |
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