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70V3579S5DR

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70V3579S5DR

IC SRAM 1.125MBIT PAR 208PQFP

Manufacturer: Renesas Electronics Corporation

Categories: Memory

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Renesas Electronics Corporation 70V3579S5DR is a high-performance synchronous dual-port SRAM memory IC. This component offers a capacity of 1.125Mbit, organized as 32K words by 36 bits, with a fast access time of 5 ns. The parallel memory interface ensures efficient data transfer. Designed for surface mount applications, it is housed in a 208-PQFP (28x28) package. The device operates within a supply voltage range of 3.15V to 3.45V and functions across an ambient temperature range of 0°C to 70°C. This synchronous dual-port SRAM technology is commonly utilized in applications requiring high-speed data buffering and inter-processor communication, such as telecommunications infrastructure, networking equipment, and high-performance computing systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case208-BFQFP
Mounting TypeSurface Mount
Memory Size1.125Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply3.15V ~ 3.45V
TechnologySRAM - Dual Port, Synchronous
Memory FormatSRAM
Supplier Device Package208-PQFP (28x28)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Access Time5 ns
Memory Organization32K x 36
ProgrammableNot Verified

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