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70V3579S4DR

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70V3579S4DR

IC SRAM 1.125MBIT PAR 208PQFP

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation 70V3579S4DR is a 1.125Mbit synchronous dual-port SRAM memory IC. This device features a parallel interface with an access time of 4.2 ns and a word organization of 32K x 36. Designed for surface mount applications, it operates within a supply voltage range of 3.15V to 3.45V and has an operating temperature range of 0°C to 70°C. The component is housed in a 208-PQFP (28x28) package. This high-speed memory solution is suitable for demanding applications in networking, telecommunications, and industrial automation systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case208-BFQFP
Mounting TypeSurface Mount
Memory Size1.125Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply3.15V ~ 3.45V
TechnologySRAM - Dual Port, Synchronous
Memory FormatSRAM
Supplier Device Package208-PQFP (28x28)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Access Time4.2 ns
Memory Organization32K x 36
ProgrammableNot Verified

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