70T659S10DR
IC SRAM 4.5MBIT PARALLEL 208PQFPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 70T659S10DR is a 4.5Mbit asynchronous dual-port SRAM memory IC. This component features a parallel interface with a memory organization of 128K x 36 and a fast access time of 10 ns. The device operates from a supply voltage range of 2.4V to 2.6V and has a write cycle time of 10 ns. Packaged in a 208-PQFP (28x28) surface-mount configuration, it is suitable for demanding applications. The 70T659S10DR is utilized in industries such as telecommunications, networking, and industrial automation where high-speed data buffering and access are critical. It operates within a temperature range of 0°C to 70°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 208-BFQFP |
| Mounting Type | Surface Mount |
| Memory Size | 4.5Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 208-PQFP (28x28) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 128K x 36 |
| Programmable | Not Verified |
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