70T659S10BFI8
IC SRAM 4.5MBIT PAR 208CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 70T659S10BFI8 is a high-performance asynchronous dual-port SRAM with a memory organization of 128K x 36, providing a total capacity of 4.5Mbit. This volatile memory component features a rapid access time of 10 ns and a corresponding write cycle time of 10ns. The device operates with a supply voltage range of 2.4V to 2.6V and is rated for an operating temperature range of -40°C to 85°C.
The 70T659S10BFI8 is supplied in a 208-CABGA (15x15) package, suitable for surface mount applications. Its parallel memory interface facilitates efficient data transfer. This component is commonly utilized in applications requiring high-speed data buffering and read-modify-write operations, such as networking infrastructure, telecommunications equipment, and high-performance computing systems. The 70T659S10BFI8 is delivered in Tape & Reel packaging for automated assembly processes.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 208-LFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4.5Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 208-CABGA (15x15) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 128K x 36 |
| Programmable | Not Verified |
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