70T659S10BCI
IC SRAM 4.5MBIT PAR 256CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation 70T659S10BCI is a 4.5Mbit asynchronous dual-port SRAM memory device. Featuring a 128K x 36 organization, this component offers a fast 10 ns access time and a 10 ns write cycle time. The parallel interface facilitates efficient data transfer, and it operates from a 2.4V to 2.6V supply. Packaged in a 256-CABGA (17x17) for surface mounting, this volatile memory component is designed for applications demanding high-speed, concurrent access. Operating within a temperature range of -40°C to 85°C, the 70T659S10BCI is suitable for use in networking infrastructure, industrial automation, and high-performance computing systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 256-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4.5Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 256-CABGA (17x17) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 128K x 36 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
IDT71V256SA10YG
IC SRAM 256KBIT PARALLEL 28SOJ
70V25S25J8
IC SRAM 128KBIT PARALLEL 84PLCC
IDT71V3557S80BQI
IC SRAM 4.5MBIT PAR 165CABGA
