70T659S10BC8
IC SRAM 4.5MBIT PAR 256CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation presents the 70T659S10BC8, a high-performance 4.5Mbit asynchronous dual-port SRAM. This device offers a rapid 10 ns access time and a word write cycle time of 10 ns, facilitating efficient data manipulation in demanding applications. The memory is organized as 128K x 36 bits and features a parallel interface. Housed in a compact 256-CABGA (17x17) package suitable for surface mounting, this SRAM operates within a voltage range of 2.4V to 2.6V and functions across an ambient temperature range of 0°C to 70°C. Its dual-port architecture enables simultaneous read and write operations, making it ideal for applications in networking infrastructure, communication systems, and high-speed data buffering.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 256-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4.5Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 256-CABGA (17x17) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 128K x 36 |
| Programmable | Not Verified |
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