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70T653MS12BC8

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70T653MS12BC8

IC SRAM 18MBIT PARALLEL 256CABGA

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation 70T653MS12BC8 is an 18Mbit parallel asynchronous SRAM featuring dual-port functionality. This memory component offers a fast access time of 12 ns and a word/page write cycle time of 12 ns, organized as 512K x 36. The 70T653MS12BC8 operates with a supply voltage range of 2.4V to 2.6V and is housed in a 256-CABGA (17x17) surface-mount package, supplied on tape and reel. Its robust design makes it suitable for demanding applications in sectors such as telecommunications, industrial automation, and high-performance computing.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case256-LBGA
Mounting TypeSurface Mount
Memory Size18Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply2.4V ~ 2.6V
TechnologySRAM - Dual Port, Asynchronous
Memory FormatSRAM
Supplier Device Package256-CABGA (17x17)
Write Cycle Time - Word, Page12ns
Memory InterfaceParallel
Access Time12 ns
Memory Organization512K x 36
ProgrammableNot Verified

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