70T653MS10BC
IC SRAM 18MBIT PARALLEL 256CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation's 70T653MS10BC is an 18Mbit asynchronous dual-port SRAM memory IC. Featuring a parallel interface and a 10 ns access time, this component is organized as 512K x 36. The 70T653MS10BC operates within a voltage range of 2.4V to 2.6V and has a write cycle time of 10 ns. It is housed in a 256-CABGA (17x17) package, suitable for surface mounting. This memory solution is designed for applications requiring high-speed data access and multitasking capabilities, commonly found in networking infrastructure, telecommunications equipment, and high-performance computing systems. The device operates reliably within a temperature range of 0°C to 70°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 256-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 18Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 256-CABGA (17x17) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 512K x 36 |
| Programmable | Not Verified |
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