70T651S12DRI
IC SRAM 9MBIT PARALLEL 208PQFPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 70T651S12DRI is a 9Mbit asynchronous dual-port SRAM organized as 256K x 36. This high-performance memory component features a rapid 12 ns access time and a 12 ns write cycle time, making it suitable for demanding applications. The 70T651S12DRI is housed in a 208-PQFP package, facilitating surface mount integration. Its operating temperature range of -40°C to 85°C (TA) ensures reliability across various environmental conditions. This SRAM is commonly deployed in applications such as networking equipment, industrial automation, and high-speed data processing systems where efficient data buffering and independent read/write operations are critical. The device operates with a supply voltage between 2.4V and 2.6V.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 208-BFQFP |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 208-PQFP (28x28) |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 36 |
| Programmable | Not Verified |
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