70T651S12DR
IC SRAM 9MBIT PARALLEL 208PQFPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation's 70T651S12DR is a 9Mbit asynchronous SRAM with a dual-port architecture. This memory component offers a 12 ns access time and a parallel interface, organized as 256K x 36 bits. Designed for surface mount applications, it is housed in a 208-PQFP (28x28) package. The device operates within a voltage range of 2.4V to 2.6V and supports a write cycle time of 12 ns. Its robust design makes it suitable for demanding applications in sectors such as telecommunications, industrial automation, and high-performance computing. The 70T651S12DR is delivered in tray packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 208-BFQFP |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 208-PQFP (28x28) |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 36 |
| Programmable | Not Verified |
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