70T651S12BCI8
IC SRAM 9MBIT PARALLEL 256CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 70T651S12BCI8 is a 9Mbit asynchronous, dual-port SRAM device organized as 256K x 36. This high-speed memory component offers a 12 ns access time and a 12 ns write cycle time, facilitating efficient data throughput in demanding applications. The 70T651S12BCI8 operates within a 2.4V to 2.6V supply voltage range and is packaged in a 256-CABGA (17x17) for surface mounting. Its robust construction and performance characteristics make it suitable for use in networking equipment, telecommunications infrastructure, and industrial control systems. The component is supplied on a tape and reel for automated assembly processes and operates across an industrial temperature range of -40°C to 85°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 256-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 256-CABGA (17x17) |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 36 |
| Programmable | Not Verified |
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