70T651S10BFI
IC SRAM 9MBIT PARALLEL 208CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 70T651S10BFI, a high-speed asynchronous dual-port SRAM, offers 9Mbit of memory organized as 256K x 36. This component features a rapid 10 ns access time and a 10 ns word/page write cycle time, designed for demanding applications requiring efficient data throughput. Operating within a voltage range of 2.4V to 2.6V, it maintains performance across an industrial temperature range of -40°C to 85°C. The 70T651S10BFI is housed in a compact 208-CABGA (15x15) surface-mount package, suitable for high-density board designs. This memory solution is frequently utilized in networking infrastructure, telecommunications equipment, and high-performance computing systems where fast, parallel data access is critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 208-LFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 208-CABGA (15x15) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 36 |
| Programmable | Not Verified |
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