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70T651S10BF

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70T651S10BF

IC SRAM 9MBIT PARALLEL 208CABGA

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation's 70T651S10BF is a 9Mbit asynchronous dual-port SRAM. This high-speed memory device features a parallel interface and an access time of 10 ns, with a write cycle time also at 10 ns. The memory organization is 256K x 36, providing ample capacity for demanding applications. It operates from a supply voltage range of 2.4V to 2.6V. The 70T651S10BF is housed in a 208-CABGA (15x15) package, suitable for surface mount applications. Its operating temperature range is 0°C to 70°C. This component is commonly utilized in networking equipment and telecommunications infrastructure.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case208-LFBGA
Mounting TypeSurface Mount
Memory Size9Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply2.4V ~ 2.6V
TechnologySRAM - Dual Port, Asynchronous
Memory FormatSRAM
Supplier Device Package208-CABGA (15x15)
Write Cycle Time - Word, Page10ns
Memory InterfaceParallel
Access Time10 ns
Memory Organization256K x 36
ProgrammableNot Verified

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