70T651S10BCI8
IC SRAM 9MBIT PARALLEL 256CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 70T651S10BCI8 is a 9Mbit parallel asynchronous dual-port SRAM. This memory component features a 10 ns access time and a 10 ns write cycle time, organized as 256K x 36. The 70T651S10BCI8 is housed in a 256-CABGA (17x17) package, suitable for surface mount applications. Operating within a temperature range of -40°C to 85°C (TA), it requires a supply voltage of 2.4V to 2.6V. This robust memory solution is utilized in various demanding applications, including industrial automation and high-performance computing. The device is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 256-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 256-CABGA (17x17) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 36 |
| Programmable | Not Verified |
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