70T651S10BC
IC SRAM 9MBIT PARALLEL 256CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 70T651S10BC, a 9Mbit parallel asynchronous SRAM, offers a fast 10 ns access time. This Dual Port SRAM is organized as 256 K words by 36 bits, providing a robust memory solution. The device operates from a 2.4V to 2.6V supply voltage and features a 10 ns write cycle time. Packaged in a 256-CABGA (17x17) for surface mounting, it is suitable for demanding applications across various industries including telecommunications and industrial automation. The operational temperature range is 0°C to 70°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 256-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 256-CABGA (17x17) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 36 |
| Programmable | Not Verified |
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