70T633S12BFI8
IC SRAM 9MBIT PARALLEL 208CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation's 70T633S12BFI8 is a 9Mbit parallel SRAM device organized as 512K x 18. This dual-port, asynchronous memory IC features a rapid 12 ns access time and a corresponding 12 ns word write cycle time. Housed in a compact 208-CABGA (15x15) package, it is designed for surface mount applications and operates within a voltage range of 2.4V to 2.6V. The component is rated for an industrial operating temperature range of -40°C to 85°C. This memory solution is suitable for demanding applications in networking, telecommunications, and industrial control systems. The device is supplied on a Tape & Reel (TR) for efficient automated assembly.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 208-LFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 208-CABGA (15x15) |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 512K x 18 |
| Programmable | Not Verified |
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