70T633S12BFI
IC SRAM 9MBIT PARALLEL 208CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation's 70T633S12BFI is a 9Mbit asynchronous, dual-port SRAM memory IC. This component features a parallel interface and a 512K x 18 memory organization, providing 9 megabits of storage. With an access time of 12 ns and a write cycle time of 12 ns, it is designed for high-speed data access. The 70T633S12BFI operates within a supply voltage range of 2.4V to 2.6V and is specified for operation from -40°C to 85°C. It is housed in a 208-CABGA (15x15) package, suitable for surface mount applications. This device finds application in demanding environments such as industrial control systems, networking infrastructure, and telecommunications equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 208-LFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 208-CABGA (15x15) |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 512K x 18 |
| Programmable | Not Verified |
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