70T633S12BC8
IC SRAM 9MBIT PARALLEL 256CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation's 70T633S12BC8 is a 9Mbit asynchronous, dual-port SRAM with a parallel interface. This memory component offers a fast 12 ns access time and a word/page write cycle time of 12 ns. The memory organization is 512K x 18, supporting volatile memory storage. It is available in a 256-CABGA (17x17) package for surface mounting and operates within a temperature range of 0°C to 70°C (TA). The supply voltage is rated between 2.4V and 2.6V. This component is suitable for applications in networking, telecommunications, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 256-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 256-CABGA (17x17) |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 512K x 18 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
72142S50P
IC SRAM
71V3577S80BQI8
IC SRAM 4.5MBIT PAR 165CABGA
7024L15PFI8
IC SRAM 64KBIT PARALLEL 100TQFP
