70T633S10BFG
IC SRAM 9MBIT PARALLEL 208CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation's 70T633S10BFG is a 9Mbit parallel asynchronous dual-port SRAM. This memory component features a 10 ns access time and a 2.4V to 2.6V supply voltage. Its organization is 512K x 18, and it is housed in a 208-CABGA (15x15) package. The 70T633S10BFG is designed for surface mounting and operates within a temperature range of 0°C to 70°C. This device is suitable for applications requiring high-speed data access and efficient memory management, commonly found in networking equipment, industrial automation, and high-performance computing. The memory type is volatile, and the write cycle time is 10 ns.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 208-LFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 208-CABGA (15x15) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 512K x 18 |
| Programmable | Not Verified |
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