70T633S10BF8
IC SRAM 9MBIT PARALLEL 208CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 70T633S10BF8 is a 9Mbit asynchronous dual-port SRAM with a 10 ns access time. This device features a parallel memory interface and a memory organization of 512K x 18. The 70T633S10BF8 is housed in a 208-CABGA (15x15) package and is designed for surface-mount applications. Operating within a voltage range of 2.4V to 2.6V, it offers a write cycle time of 10 ns. This component is suitable for demanding applications in networking, telecommunications, and high-performance computing. The device operates within an ambient temperature range of 0°C to 70°C and is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 208-LFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 208-CABGA (15x15) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 512K x 18 |
| Programmable | Not Verified |
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