70T633S10BCI8
IC SRAM 9MBIT PARALLEL 256CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation 70T633S10BCI8 is a 9Mbit parallel asynchronous SRAM with a 10 ns access time. This dual-port memory solution, organized as 512K x 18, is housed in a 256-CABGA (17x17) package and supports surface mount installation. Operating within a temperature range of -40°C to 85°C, it requires a supply voltage of 2.4V to 2.6V and features a write cycle time of 10 ns. This component is commonly utilized in high-performance applications across networking, telecommunications, and industrial automation sectors. The 70T633S10BCI8 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 256-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 256-CABGA (17x17) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 512K x 18 |
| Programmable | Not Verified |
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