70T633S10BC8
IC SRAM 9MBIT PARALLEL 256CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 70T633S10BC8 is a 9Mbit asynchronous dual-port SRAM with a parallel interface. This memory component offers a fast access time of 10 ns and a write cycle time of 10 ns. The device is organized as 512K x 18 and is housed in a 256-CABGA (17x17) package, suitable for surface mounting. Operating within a voltage range of 2.4V to 2.6V and a commercial temperature range of 0°C to 70°C, the 70T633S10BC8 is commonly utilized in high-performance applications across various industries including telecommunications and computing. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 256-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 256-CABGA (17x17) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 512K x 18 |
| Programmable | Not Verified |
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