70T3339S200BC8
IC SRAM 9MBIT PARALLEL 256CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation's 70T3339S200BC8 is a high-performance synchronous dual-port SRAM designed for demanding applications. This memory component offers a 9Mbit capacity organized as 512K x 18, enabling efficient data handling. Operating at a clock frequency of 200 MHz with an access time of 3.4 ns, it is suitable for high-speed data buffering and communication protocols. The device features a parallel interface and is housed in a compact 256-CABGA (17x17) package, facilitating surface mount assembly. With a supply voltage range of 2.4V to 2.6V and an operating temperature range of 0°C to 70°C, this SRAM is optimized for use in networking equipment, telecommunications infrastructure, and high-end computing systems where rapid data throughput is critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 256-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Dual Port, Synchronous |
| Clock Frequency | 200 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 256-CABGA (17x17) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Access Time | 3.4 ns |
| Memory Organization | 512K x 18 |
| Programmable | Not Verified |
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