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6116SA70TDB

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6116SA70TDB

IC SRAM 16KBIT PARALLEL 24CDIP

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation 6116SA70TDB is a high-performance, asynchronous SRAM memory IC with a density of 16Kbit. This component features a parallel interface and a memory organization of 2K x 8, ensuring efficient data access. With an access time of 70 ns and a write cycle time also of 70 ns, it is suitable for applications requiring rapid data manipulation. The 6116SA70TDB operates within a supply voltage range of 4.5V to 5.5V and is designed for through-hole mounting. Its robust construction is evident in the 24-CDIP package, rated for an extended operating temperature range of -55°C to 125°C (TA). This reliable memory solution finds application in demanding sectors such as industrial automation, defense, and aerospace.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case24-CDIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Memory Size16Kbit
Memory TypeVolatile
Operating Temperature-55°C ~ 125°C (TA)
Voltage - Supply4.5V ~ 5.5V
TechnologySRAM - Asynchronous
Memory FormatSRAM
Supplier Device Package24-CDIP
Write Cycle Time - Word, Page70ns
Memory InterfaceParallel
Access Time70 ns
Memory Organization2K x 8
ProgrammableNot Verified

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