6116LA35TDB
IC SRAM 16KBIT PARALLEL 24CDIPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 6116LA35TDB is a 16Kbit asynchronous SRAM memory IC. Featuring a parallel interface and organized as 2K x 8, this component offers a fast access time of 35 ns. The device operates with a supply voltage range of 4.5V to 5.5V and a write cycle time of 35ns. It is housed in a 24-CDIP (0.300", 7.62mm) package, designed for through-hole mounting. The operating temperature range is -55°C to 125°C (TA). This SRAM is utilized in demanding applications across various industries requiring reliable and high-performance memory solutions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 24-CDIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Memory Size | 16Kbit |
| Memory Type | Volatile |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 24-CDIP |
| Write Cycle Time - Word, Page | 35ns |
| Memory Interface | Parallel |
| Access Time | 35 ns |
| Memory Organization | 2K x 8 |
| Programmable | Not Verified |
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