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6116LA25TDB

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6116LA25TDB

IC SRAM 16KBIT PARALLEL 24CDIP

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation's 6116LA25TDB is a 16Kbit asynchronous SRAM memory IC. This component features a parallel interface with a memory organization of 2K x 8, providing a fast access time of 25 ns. The device operates within a voltage range of 4.5V to 5.5V and is supplied in a 24-CDIP (0.300" diameter) package. Its robust design supports an extended operating temperature range of -55°C to 125°C (TA). The 6116LA25TDB is suitable for applications in industrial automation, telecommunications, and defense sectors where reliable and high-speed memory is critical.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case24-CDIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Memory Size16Kbit
Memory TypeVolatile
Operating Temperature-55°C ~ 125°C (TA)
Voltage - Supply4.5V ~ 5.5V
TechnologySRAM - Asynchronous
Memory FormatSRAM
Supplier Device Package24-CDIP
Write Cycle Time - Word, Page25ns
Memory InterfaceParallel
Access Time25 ns
Memory Organization2K x 8
ProgrammableNot Verified

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