6116LA150DB
IC SRAM 16KBIT PARALLEL 24CDIPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 6116LA150DB is an asynchronous SRAM memory component organized as 2K x 8, providing 16Kbit of fast parallel memory access. Featuring an access time of 150 ns and a write cycle time of 150ns, this device is suitable for applications requiring reliable data storage. The 6116LA150DB operates within a voltage range of 4.5V to 5.5V and is specified for operation across an extended temperature range of -55°C to 125°C (TA). It is packaged in a 24-CDIP (0.600", 15.24mm) for through-hole mounting. This component finds application in industrial control systems, telecommunications infrastructure, and military/aerospace electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 24-CDIP (0.600"", 15.24mm) |
| Mounting Type | Through Hole |
| Memory Size | 16Kbit |
| Memory Type | Volatile |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 24-CDIP |
| Write Cycle Time - Word, Page | 150ns |
| Memory Interface | Parallel |
| Access Time | 150 ns |
| Memory Organization | 2K x 8 |
| Programmable | Not Verified |
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