6116LA120TDB
IC SRAM 16KBIT PARALLEL 24CDIPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 6116LA120TDB is an asynchronous SRAM memory IC with a 16Kbit capacity. This component features a parallel interface and a memory organization of 2K x 8. It offers an access time of 120 ns and a write cycle time of 120 ns. The device operates within a voltage range of 4.5V to 5.5V and is specified for an operating temperature range of -55°C to 125°C (TA). The 6116LA120TDB is supplied in a 24-CDIP package, suitable for through-hole mounting. This memory solution is utilized in various industrial applications requiring reliable, high-temperature operation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 24-CDIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Memory Size | 16Kbit |
| Memory Type | Volatile |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 24-CDIP |
| Write Cycle Time - Word, Page | 120ns |
| Memory Interface | Parallel |
| Access Time | 120 ns |
| Memory Organization | 2K x 8 |
| Programmable | Not Verified |
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