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2SK1070PIDTL-E

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2SK1070PIDTL-E

JFET N-CH 22V 50MA 3MPAK

Manufacturer: Renesas Electronics Corporation

Categories: JFETs

Quality Control: Learn More

The Renesas Electronics Corporation 2SK1070PIDTL-E is an N-Channel JFET designed for high-performance applications. This JFET offers a drain current (Id) of 50 mA with a breakdown voltage of 22 V. It features a low cutoff voltage (VGS off) of 0 V @ 10 µA and a specified input capacitance (Ciss) of 9 pF @ 5V. The device is housed in a compact 3-MPAK (TO-236-3, SC-59, SOT-23-3) package, suitable for surface mount assembly. With a maximum power dissipation of 150 mW, it operates effectively across a wide temperature range up to 150°C. This component finds use in various industrial and consumer electronics, including signal amplification and switching circuits. The 2SK1070PIDTL-E is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds9pF @ 5V
Voltage - Breakdown (V(BR)GSS)22 V
Current Drain (Id) - Max50 mA
Supplier Device Package3-MPAK
Power - Max150 mW
Voltage - Cutoff (VGS off) @ Id0 V @ 10 µA
Current - Drain (Idss) @ Vds (Vgs=0)12 mA @ 5 V

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