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R2J20657NP#G3

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R2J20657NP#G3

HALF BRIDGE BASED MOSFET DRIVER

Manufacturer: Renesas Electronics Corporation

Categories: Gate Drivers

Quality Control: Learn More

Renesas Electronics Corporation's R2J20657NP-G3 is a single-channel, half-bridge MOSFET driver designed for high-side or low-side gate drive configurations. This TTL-compatible device operates with a supply voltage range of 4.5V to 16V and features a 25V maximum bootstrap voltage. The R2J20657NP-G3 supports N-channel MOSFETs and offers independent channel control. With a logic voltage threshold of 0.8V for VIL and 2.6V for VIH, it is suitable for applications requiring precise gate control. The component is housed in a 40-QFN (6x6) exposed pad package, suitable for surface mounting. The R2J20657NP-G3 finds application in power supply units, motor control systems, and industrial automation where efficient switching of power MOSFETs is critical. This component operates within an extended temperature range of -40°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case40-WFQFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply4.5V ~ 16V
Input TypeTTL
High Side Voltage - Max (Bootstrap)25 V
Supplier Device Package40-QFN (6x6)
Rise / Fall Time (Typ)-
Channel TypeIndependent
Driven ConfigurationHigh-Side or Low-Side
Number of Drivers1
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.6V
Current - Peak Output (Source, Sink)-
ProgrammableNot Verified

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