ISL89163FBECZ
IC GATE DRVR LOW-SIDE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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The Renesas Electronics Corporation ISL89163FBECZ is a dual, low-side N-channel MOSFET gate driver. This component features independent gate drive channels with a non-inverting input. It is engineered to deliver robust performance with peak output currents of 6A sourcing and 6A sinking, facilitating rapid switching transitions with typical rise and fall times of 20ns. Operating over a supply voltage range of 7.5V to 16V, the ISL89163FBECZ is suitable for applications requiring efficient control of high-power MOSFETs. The device operates within a junction temperature range of -40°C to 125°C and is housed in an 8-SOIC-EP package, designed for surface mounting. This gate driver is commonly utilized in power supply, industrial motor control, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Voltage - Supply | 7.5V ~ 16V |
| Input Type | Non-Inverting |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 20ns, 20ns |
| Channel Type | Independent |
| Driven Configuration | Low-Side |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 2.4V, 9.6V |
| Current - Peak Output (Source, Sink) | 6A, 6A |
| Programmable | Not Verified |
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