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ISL6613IBZ

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ISL6613IBZ

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Renesas Electronics Corporation

Categories: Gate Drivers

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The ISL6613IBZ from Renesas Electronics Corporation is a half-bridge gate driver IC. This non-inverting driver is housed in an 8-SOIC package and is designed for driving N-channel MOSFETs. It features two drivers, capable of delivering peak output currents of 1.25A source and 2A sink. The high-side voltage can reach a maximum of 36V via bootstrap. Rise and fall times are typically 26ns and 18ns, respectively. Operating within a supply voltage range of 10.8V to 13.2V, this component is suitable for applications requiring efficient power conversion, including computing, industrial power supplies, and telecommunications infrastructure. The device operates across an ambient temperature range of -40°C to 125°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TJ)
Voltage - Supply10.8V ~ 13.2V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)36 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)26ns, 18ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH-
Current - Peak Output (Source, Sink)1.25A, 2A
ProgrammableNot Verified

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